| PART |
Description |
Maker |
| BF1012 Q62702-F1487 Q62702-S535 Q62702-C1659 |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) NPN硅自动对焦和开关晶体管（高击穿电压低集电极发射极饱和电压）
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| BF1005S Q62702-F1665 |
Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
|
| 801-4 800 800-1 800-2 800-3 800-4 801-1 801-2 801- |
PROFET™: Smart High Side Switches; Package: PG-TO220-5; Channels: 1.0; RON @ Tj = 25°C : 220.0 mOhm; Recommended Operating Voltage Range: 4.7 - 42.0 V; IL(SC): 12.0 A; Diagnostic: digital
PROFET™: Smart High Side Switches; Package: PG-DSO-8; Channels: 1.0; RON @ Tj = 25°C : 200.0 mOhm; Recommended Operating Voltage Range: 6.0 - 52.0 V; IL(SC): 6.5 A; Diagnostic: digital
Voltage Range: 12.0 - 45.0 V; IL(SC): 2.1 A; Diagnostic: n.a.
PROFET™: Smart High Side Switches; Package: PG-SOT223-4; Channels: 1.0; RON @ Tj = 25°C : 1,500.0 mOhm; Recommended Operating Voltage Range: 4.9 - 60.0 V; IL(SC): 0.9 A; Diagnostic: n.a.
RECTIFIERS ASSEMBLIES THREE PHASE BRIDGES, 20-40 AMP, STANDARD HIGH EFFICIENCY, ESP
|
MICROSEMI[Microsemi Corporation]
|
| MM-0637A-40D |
Operating Voltage = 48 Vdc (Typical) Operating Voltage Max. = 0-75Vdc
|
JMK Inc.
|
| LP62E16256C-TSERIES LP62E16256CU-60LLT LP62E16256C |
256K X 16 BIT LOW VOLTAGE CMOS SRAM
60ns; operating current:30mA; standby current:10uA; 256 x 16bit low voltage CMOS SRAM
70ns; operating current:30mA; standby current:10uA; 256 x 16bit low voltage CMOS SRAM
|
AMIC Technology
|
| KK-0332-30 |
Operating Voltage= 250/440 Vac Operating Current Max= 30 amp/Ph
|
JMK Inc.
|
| FF-1153-12.5 |
Operating Voltage = 250/480 Vac Operating Current Max= 12.5 amps
|
JMK Inc.
|
| FF-1503-18 |
Operating Voltage = 125 Vac Operating Current (Max) = 18 AMP A/C
|
JMK Inc.
|
| HH-1199-6 |
Operating voltage = 125 / 250 v~ Operating current (max) = 6.0 amperes
|
JMK Inc.
|
